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QID Series High Power W-Band CW and Pulse IMPATT Diodes

Characteristics
  • High Power
  • CW and Pulse
  • Low Parasitic Package
  • Low Thermal Resistance (RTH) Diamond Heatsink
Product Description

QuinStar Technology's QID series W-Band IMPATT diodes are high power silicon double drift diodes packaged in a low parasitic, hermetically sealed package. The diodes are mounted on a metallized diamond heatsink and copper base for efficient heat removal.

CW, long and short pulse diodes are offered and power output levels are tested over specific frequency windows.


Reliability Screening
qid_high_power_impatt_diodes_b1.jpg (64513 bytes) qid_high_power_impatt_diodes_b2.jpg (80409 bytes)

Under a program sponsored by a major aerospace customer, QuinStar Technology, Inc. has completed the fabrication of a burn-in test station for high power IMPATT diodes aimed at reducing the probability of any process related early diode failures in mission critical hardware. Such a burn-in procedure has been shown in previously conducted tests on space programs to be effective in eliminating over 97% of early failures. 

The station is capable of burning in 24 diodes at a time. Various safeguards are built into the station to ensure that the early failures are attributed only to process-related defects, and not due to other external factors. This burn-in procedure will be implemented on all QuinStar IMPATT products to ensure reliable operations.


Specifications
CW and Long Pulse1 Diodes
Test Circuit Waveguide Band W
75-110
Test Frequency Range (GHz) 92-96
Power Outputs Available (mW typ)2 400
Operating Voltage Range (V) 16-22
Total Capacitance at V=0 (pF) 0.7-1.5
Short Pulse Diodes
Test Circuit Waveguide Band W
75-110
Test Frequency Range (GHz) 92-96
Peak Power Outputs Available (W typ) 2 20
Total Capacitance at V=0 (pF typ) 6.0-9.0
Pulse Width (nS typ) 100

Notes:
1Long Pulse: >1 uSec, up to 100% duty factor
2 Diodes are tested to provide specified minimum power output at an unspecified single frequency in the test frequency range with estimated junction temperature not exceeding 250°C with the test fixture cavity at 50°C.


Outline Drawing/Mechanical Specifications
FREQUENCY
BAND
OUTLINE DIMENSIONS, inches/mm
A (CW, Long Pulse, Short Pulse) A (Hi Power Dual Diode, Short Pulse) B
W 0.035/0.89 0.030/0.76 0.013/0.33

Ordering Information

Model Number: QID - AB CD E 0 (click here for automatic web quote request form)

AB = Center frequency (rounded to nearest GHz)
(1A = 100-109 GHz)
CD = Power output in dBm
E = Diode type:
C = CW and Long Pulse
P = Short Pulse

 

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